MTN9N60BE3 Datasheet, PDF (2/10 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C125E3
Issued Date : 2016.03.21
Revised Date :
Page No. : 2/10
Symbol
Outline
MTN9N60BE3
TO-220
G：Gate D：Drain S：Source
GDS
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Current
(Note 2)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Note : 1. Pulse width limited by maximum junction temperature.
2. IAS=8.5A, VDD=50V, L=7mH, VG=10V, starting TJ=+25℃.
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
TL
TPKG
PD
Tj, Tstg
Limits
600
±30
8.5*
5.4*
34*
8.5
252
5
300
260
150
1.2
-55~+150
Unit
V
A
mJ
°C
W
W/°C
°C
MTN9N60BE3
CYStek Product Specification