MTN7002CKN3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C087N3
Issued Date : 2016.12.30
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
ESD susceptibility
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
PD
VESD
Tj
Tstg
Limits
Unit
60
±20
V
700
560
mA
2900 *1
350 *2
mW
3000 *3
V
-55~+150
-55~+150
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient
Symbol
RθJA
Value
357 *2
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
*3. Human body model, 1.5kΩ in series with 100pF
Unit
°C/W
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ. Max. Unit
Static
BVDSS*
60
VGS(th)
1.0
IGSS
-
-
IDSS
-
-
-
-
2.5
V
-
±10
-
1
μA
-
10
RDS(ON)*
-
-
0.27
0.71
0.6
1.5
Ω
GFS
300
756
-
mS
Dynamic
Ciss
Coss
Crss
*tr
*td
*tstg
*tf
*Qg
*Qgs
-
52
78
-
16
24
pF
-
7.3
11
-
6.6
9.9
-
-
18.8
25.6
28.2
38.4
ns
-
15.8 23.7
-
1.4
2.1
-
0.6
0.9 nC
*Qgd
-
0.6
0.9
MTN7002CKN3
Test Conditions
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±16V, VDS=0V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, Tj=55°C
ID=700mA, VGS=10V
ID=500mA, VGS=4.5V
VDS=10V, ID=500mA
VDS=30V, VGS=0V, f=1MHz
VDS=15V, ID=0.7A, VGS=10V, RG=6Ω
VDS=30V, ID=0.7A, VGS=10V
CYStek Product Specification