MTN5N50E3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C740E3
Issued Date : 2009.09.14
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V (Note 2)
Single Pulse Avalanche Energy (Note 3)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 4)
Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor above 25℃
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Symbol
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
TL
PD
Tj, Tstg
Limits
500
±30
4.5*
2.7*
18*
171
4.5
8
4.5
300
85
0.67
-55~+150
Unit
V
V
A
A
A
mJ
A
mJ
V/ns
°C
W
W/°C
°C
Note : 1. TJ=+25℃ to +150℃.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. ISD=4.5A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃.
4. IAS=4.5A, VDD=50V, L=15mH, RG=25Ω, starting TJ=+25℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.47
62.5
Unit
°C/W
°C/W
MTN5N50E3
CYStek Product Specification