MTDN9926Q8 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C747Q8
Issued Date : 2009.11.09
Revised Date : 2011.03.21
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
20
Gate-Source Voltage
Continuous Drain Current @ VGS=4.5V, TA=25 °C (Note 1)
Continuous Drain Current @ VGS=4.5V, TA=70 °C (Note 1)
VGS
±12
ID
6
ID
4.8
Pulsed Drain Current (Note 2&3)
IDM
20
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
Pd
2
0.016
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
Thermal Resistance, Junction-to-Ambient (Note 1)
Rth,ja
62.5
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum copper pad
2. Pulse width limited by maximum junction temperature.
3. Pulse width≤300μs, duty cycle≤2%
Unit
V
V
A
A
A
W
W / °C
°C
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
20
ΔBVDSS/ΔTj
-
VGS(th)
0.5
GFS
-
IGSS
-
IDSS
-
-
*RDS(ON)
-
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*VSD
-
*IS
-
-
0.03
-
20
-
-
-
-
-
23
4.5
7
30
70
40
65
1035
320
150
-
-
-
-
1.2
-
±100
1
25
28
38
-
-
-
-
-
-
-
-
-
-
1.2
1.54
V
V/°C
V
S
nA
μA
μA
mΩ
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS = VGS, ID=250μA
VDS=10V, ID=6A
VGS=±12V, VDS=0
VDS =20V, VGS =0
VDS =16V, VGS =0, Tj=70°C
ID=6A, VGS=4.5V
ID=5.2A, VGS=2.5V
nC
VDS=20V, ID=6A, VGS=5V
ns
VDS=10V, ID=1A,
VGS=5V, RG=6Ω, RD=10Ω
pF
VDS=20V, VGS=0, f=1MHz
V
IS=1.7A, VGS=0V
A
VD=VG=0V, VS=1.3V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTDN9926Q8
CYStek Product Specification