MTD06N04Q8 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=15A, VGS=10V, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation *3
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Spec. No. : C892Q8
Issued Date : 2013.01.28
Revised Date :
Page No. : 2/9
Limits
Unit
40
V
±20
15
12
A
140 *1
15
113
mJ
0.5 *2
3.1
W
2
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
20
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
40 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 75°C/W at steady state; 125°C/W when mounted on
minimum copper pad.
The value in any given application depends on the user’s specific board design.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
40
-
-
V VGS=0, ID=250μA
1.5
2.1
3
V VDS =VGS, ID=250μA
-
-
±100 nA VGS=±20, VDS=0
IDSS
-
-
-
-
1
5
μA
VDS =40V, VGS =0
VDS =40V, VGS =0, TJ=55°C
RDS(ON) *1
-
6
8
mΩ ^{VGS =10V, ID=10A}
-
10
13
VGS =4.5V, ID=8A
GFS *1
-
18
-
S VDS =5V, ID=10A
Dynamic
Qg(VGS=10V)*1, 2
-
35
-
Qg(VGS=4.5V)*1, 2
Qgs *1, 2
-
22.8
10.2
-
nC ID=15A, VDS=20V, VGS=10V
Qgd *1, 2
-
9.3
-
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
-
10
-
-
-
11
35
-
-
ns
VDS=20V, ID=10A, VGS=10V,
RG=3Ω
tf *1, 2
-
13
-
MTD06N04Q8
CYStek Product Specification