MTC4603H8 Datasheet, PDF (2/14 Pages) Cystech Electonics Corp. – N- and P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C921H8
Issued Date : 2016.11.07
Revised Date : 2016.11.08
Page No. : 2/14
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
N-channel P-channel
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
30
VGS
±20
-30
±20
V
TA=25 °C, VGS=10V (-10V)
10.3
-9.6
IDSM
Continuous Drain Current ^{TA=70 °C, VGS=10V (-10V)}
8.2
-7.7
TC=25 °C, VGS=10V (-10V)
32.8
-30.3
ID
A
TC=100 °C, VGS=10V (-10V)
20.7
-19.2
Pulsed Drain Current (Note 1 & 2)
IDM
46
-43
Single Pulse Avalanche Current @ L=0.1mH
IAS
30
34
Single Pulse Avalanche Energy (Note 4)
EAS
60.5
108
mJ
Power Dissipation
TA=25 °C
TA=70 °C
TC=25 °C
TC=100 °C
PDSM
PD
2.5 (Note 3)
1.6 (Note 3)
W
25
10
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
RθJC
RθJA
5
50 (Note 3)
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
4. For N-channel, L=1mH, VDD=15V, VGS=10V, IAS=11A; for P-channel, L=3mH, VDD=-15V, VGS=-10V, IAS=-8.5A
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
30
VGS(th)
1.0
-
-
V
VGS=0V, ID=250μA
-
2.5
VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
1
25
μA
VDS=24V, VGS=0V
VDS=24V, VGS=0, Tj=125°C
-
*RDS(ON)
10
13
mΩ ^{ID=6A, VGS=10V}
-
12.7
17
ID=4A, VGS=4.5V
*GFS
-
7
-
S
VDS=10V, ID=6A
Dynamic
Ciss
Coss
Crss
-
788
1180
-
91
-
pF VDS=25V, VGS=0V, f=1MHz
-
73
-
MTC4603H8
CYStek Product Specification