MTC4503Q8G Datasheet, PDF (2/10 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C384Q8
Issued Date : 2010.12.10
Revised Date :
Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
Single Avalanche Current
Total Power Dissipation @TA=25°C (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
BVDSS
VGS
ID
ID
IDM
IAS
Pd
Tj; Tstg
RθJC
RθJA
Limits
N-channel P-channel
30
-30
±20
±20
6.9
-6.3
5.5
-5.0
30
-30
6.9
-6.3
2
0.016
-55~+150
25
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
Unit
V
V
A
A
A
A
W
W / °C
°C
°C/W
°C/W
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
30
∆BVDSS/∆Tj
-
VGS(th)
1.0
IGSS
-
IDSS
-
IDSS
-
-
*RDS(ON)
-
-
0.005
-
-
-
-
-
-
-
-
3.0
±100
1
25
28
42
V
V/°C
V
nA
μA
μA
mΩ
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=30V, VGS=0
VDS=24V, VGS=0, Tj=70°C
ID=6A, VGS=10V
ID=4A, VGS=4.5V
*GFS
-
5.7
-
S
VDS=10V, ID=6A
Dynamic
Ciss
-
Coss
-
Crss
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
*Qg
-
*Qgs
-
*Qgd
-
Body Diode
*VF(S-D)
-
*trr
-
*Qrr
-
610
970
160
-
pF VDS=25V, VGS=0, f=1MHz
120
-
8
-
7
19
-
-
ns
VDS=15V, ID=1A,
VGS=10V, RG=3.3Ω, RD=15Ω
6
-
9
15
2
-
nC VDS=24V, ID=6A, VGS=4.5V
6
-
0.88
1.2
V
VGS=0V, IF=6.9A
18
-
ns
11
-
nC ^{IF=6.9A, VGS=0V, dI/dt=100A/μs}
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC4503Q8G
CYStek Product Specification