MTB40P06J3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – P-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-12A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Spec. No. : C796J3
Issued Date : 2010.02.11
Revised Date : 2013.12.26
Page No. : 2/8
Limits
Unit
-60
±20
V
-17
-11
A
-60
-12
7.2
mJ
3.6
33
W
10
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
4.5
110
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit Test Conditions
Static
BVDSS
-60
VGS(th)
-1
IGSS
-
IDSS
-
-
ID(ON) *1
-17
-
RDS(ON) *1
-
GFS *1
-
Dynamic
Qg *1, 2
-
Qgs *1, 2
-
Qgd *1, 2
-
td(ON) *1, 2
-
tr *1, 2
-
td(OFF) *1, 2
-
tf *1, 2
-
-
-
V VGS=0, ID=-250μA
-1.8
-3
V VDS =VGS, ID=-250μA
-
±100
nA V_GS=±20, V_DS=0
-
-1
μA VDS =-48V, VGS =0
-
-25
μA V_DS =-40V, V_GS =0, T_J=125°C
-
-
A VDS =-5V, VGS =-4.5V
55
62
mΩ VGS =-10V, ID=-15A
75
90
mΩ VGS =-4.5V, ID=-7A
12
-
S VDS =-5V, ID=-15A
35
-
5
-
nC ID=-10A, VDS=-30V, VGS=-10V
12
-
12
-
24
45
-
-
ns
VDS=-10V, ID=-1A, VGS=-10V,
RG=6Ω
60
-
MTB40P06J3
CYStek Product Specification