MTB11N03Q8 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C711Q8
Issued Date : 2009.05.07
Revised Date :2009.05.19
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=11A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25℃
TA=100℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
Unit
30
V
±20
12
10
A
48 *1
11
6
mJ
3 *2
3
W
1.5
-55~+175
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
30
VGS(th)
1.0
GFS *1
-
IGSS
-
IDSS
-
-
ID(ON) *1
12
-
RDS(ON) *1
-
Dynamic
Ciss
-
Coss
-
Crss
-
-
1.5
38
-
-
-
-
9.5
13
2020
275
160
-
3.0
-
±100
1
25
-
11
16.5
-
-
-
V
VGS=0, ID=250μA
V
VDS = VGS, ID=250μA
S
VDS =5V, ID=11A
nA
VGS=±20
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
A
VDS =10V, VGS =10V
mΩ VGS =10V, ID=12A
mΩ VGS =4.5V, ID=10A
pF
VGS=0V, VDS=15V, f=1MHz
MTB11N03Q8
CYStek Product Specification