MTB080N15J3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=6mH, ID=6.3A, RG=25Ω
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Total Power Dissipation @TA=25℃
Total Power Dissipation @TA=100℃
Total Power Dissipation @TA=25℃
Total Power Dissipation @TA=100℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
*2
*2 _IDSM
*3
*3
IDM
IAS
EAS
PD
*2
*2
PDSM
*3
*3
Tj, Tstg
Spec. No. : C987J3
Issued Date : 2015.02.03
Revised Date :
Page No. : 2/9
Limits
Unit
150
±20
V
18.0
12.7
3.2
2.0
A
2.6
1.6
72
6.3
119
mJ
83
42
2.5
W
1.0
1.7
0.7
-55~+175
°C
Thermal Data
Parameter
Symbol
Thermal Resistance, Junction-to-case, max
Rth,j-c
Thermal Resistance, Junction-to-ambient, max *2
Thermal Resistance, Junction-to-ambient, max *3
Rth,j-a
Value
2
50
75
Unit
°C/W
Note : *1. Pulse width limited by maximum junction temperature
*2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper.
*3. When the device is on the minimum pad size recommended.
*4. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
*5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value
in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may
be used if the PCB allows it.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
150
-
∆BVDSS/∆Tj
-
0.15
-
V VGS=0V, ID=250μA
-
V/°C Reference to 25°C, ID=250μA
VGS(th)
1.0
GFS *1
-
IGSS
-
-
2.5
V VDS =VGS, ID=250μA
18
-
S VDS =10V, ID=10A
-
±100
nA V_GS=±20V, V_DS=0V
MTB080N15J3
CYStek Product Specification