MTB04N03H8 Datasheet, PDF (2/11 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C789H8
Issued Date : 2010.09.23
Revised Date : 2012.11.12
Page No. : 2/11
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TC=25℃
TC=100℃
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
30
V
±20
75
47
A
160 *1
53
140
mJ
40 *2
50
W
20
-55~+150
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V N-CH
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
2.5
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3 °C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
30
VGS(th)
1.0
GFS *1
-
IGSS
-
IDSS
-
-
-
RDS(ON) *1
-
Dynamic
Ciss
-
Coss
-
Crss
-
-
1.7
25
-
-
-
3.2
4.9
3925
438
385
-
3.0
-
±100
1
25
4
6.6
-
-
-
V
VGS=0, ID=250μA
V
VDS = VGS, ID=250μA
S
VDS =5V, ID=24A
nA
VGS=±20
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
mΩ VGS =10V, ID=30A
mΩ VGS =4.5V, ID=24A
pF
VGS=0V, VDS=15V, f=1MHz
MTB04N03H8
CYStek Product Specification