MEP4435Q8 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

CYStech Electronics Corp.
Spec. No. : C391Q8-A
Issued Date : 2008.07.17
Revised Date :
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C
Continuous Drain Current @TA=100 °C
Pulsed Drain Current (Note 1)
Total Power Dissipation @ TA=25 °C (Note 2)
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 2)
BVDSS
VGS
ID
ID
IDM
Pd
Tj
Tstg
Rth,j-a
-30
±25
-10
-8
-40
2.5
0.02
-55~+150
-55~+150
50
V
V
A
A
A
W
W / °C
°C
°C
°C/W
Note : 1.Pulse width limited by maximum junction temperature.
2. Surface mounted on 1 in² copper pad of FR-4 board; 125 °C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ. Max. Unit
Test Conditions
Static
BVDSS
-30
-
-
V VGS=0, ID=-250μA
ΔVDSS/ΔTj
-
-0.037
-
V/°C Reference to 25°C, ID=-1mA
VGS(th)
-1
-
-3
V VDS=VGS, ID=-250μA
IGSS
-
-
±100 nA VGS=±25V, VDS=0
IDSS
-
-
-1
μA VDS=-24V, VGS=0
IDSS
-
-
-10
μA VDS=-20V, VGS=0, Tj=125°C
ID(ON)
40
-
-
A VDS=-5V, VGS=-10V
-
*RDS(ON)
-
15
25
20
35
mΩ
ID=-10A, VGS=-10V
ID=-7A, VGS=-5V
*GFS
-
24
-
S VDS=-5V, ID=-10A
Dynamic
Ciss
-
2815
-
Coss
-
1060
-
pF VDS=-15V, VGS=0, f=1MHz
Crss
-
955
-
td(ON)
-
12
-
tr
td(OFF)
-
-
10
35
-
-
ns
VDD=-15V, ID=-1A,
VGS=-10V, RG=2.7Ω
tf
-
7
-
Qg
Qgs
-
-
25
7
-
-
nC
VDS=-15V, ID=-10A,
VGS=-10V,
Qgd
-
9
-
Rg
-
4
-
Ω VGS=15mV, VDS=0, f=1MHz
MEP4435Q8
CYStek Product Specification