MDL914S2 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – High -speed switching diode

CYStech Electronics Corp.
Spec. No. : C303S2
Issued Date : 2003.12.11
Revised Date
Page No. : 2/4
Electrical Characteristics @ TA=25℃ unless otherwise specified
Parameters
Reverse breakdown voltage
Forward voltage
Reverse leakage current
Diode capacitance
Symbol
VR
VF
IR
CD
Reverse recovery time
trr
Conditions
Min Typ. Max Unit
IR=100µA
IF=10mA
-
VR=20V
VR=75V
-
VR=0V, f=1MHz
-
when switched from IF=10mA
to IR=10mA,RL=100Ω,
-
measured at IR=1mA
- 1V
-
25 nA
5 µA
- 4 pF
- 4 ns
Thermal Characteristics
Symbol
Parameter
Conditions Max Unit
Ptot, Ta=25℃
Derate above 25℃
Rth, j-a
Total device dissipation on FR-4 board
Thermal resistance from junction to ambient
Note 1
Note 1
200
mW
1.57 mW/^℃
635 ℃/W
Note 1: Device mounted on an FR-4 PCB.
MDL914S2
CYStek Product Specification