MBR1060FP Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – 10Amp. Schottky Barrier Rectifiers

CYStech Electronics Corp.
Spec. No. : C466FP
Issued Date : 2009.03.19
Revised Date :2009.10.23
Page No. : 2/4
Maximum Ratings and Electrical Characteristics (Per Diode Leg)
(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,
resistive or inductive load. For capacitive load, derate current by 20%.)
Parameter
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Symbol
VRRM
VRMS
VDC
Min.
Typ.
Max.
60
42
60
Units
V
V
V
IF=5A, TC=25℃
Maximum instantaneous
forward voltage at
IF=5A, TC=125℃
VF
(Note 1)
IF=10 A, TC=25℃
IF=10A, TC=125℃
Maximum Average forward
rectified current @ TC=145℃
Per Diode
Per Device
IF(AV)
Non-repetitive peak forward surge current @
8.3ms single half sine wave superimposed on
IFSM
rated load (JEDEC method)
Peak repetitive reverse surge current, TJ<175℃ (Note 1 )
Maximum instantaneous ^VR^{=60 V, T}C^=25℃
reverse current at
VR=60 V, TC=125℃
IRRM
IR
Voltage rate of change, (rated VR)
dV/dt
Typical junction capacitance @ f=1MHz and applied
5V reverse voltage
CJ
ESD susceptibility (Note 2)
Storage temperature range
Tstg
-65
Operating junction temperature range
TJ
-65
Notes : 1. 2.0μs pulse width, f=1.0kHz
2. Human body model, 1.5kΩ in series with 100pF
0.76
0.58
0.62
V
0.85
0.71
5
A
10
110
A
2.5
A
10
μA
10
mA
10,000 V/μs
110
pF
8000
V
+175
℃
+175
℃
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-to-case
Lead Temperature for Soldering Purposes : 1/8” from Case for 5seconds
Symbol Value
Rth,j-c
3.5
TL
260
Unit
°C/W
°C
Ordering Information
Device
MBR1060FP
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs / Tube, 40 Tubes/Box
Marking
1060
MBR1060FP
CYStek Product Specification