HBNP54S6_17 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – General Purpose NPN / PNP Epitaxial Planar Transistors

CYStech Electronics Corp.
Spec. No. : C904S6
Issued Date : 2013.10.21
Revised Date : 2017.07.04
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Limits
Symbol
TR1 (NPN) TR2 (PNP)
Unit
VCBO
180
-160
V
VCEO
160
-160
V
VEBO
6
-6
V
IC
600
-600
mA
Pd
200(total) *1
mW
Tj
150
°C
Tstg
-55~+150
°C
Note: *1 150mW per element must not be exceeded.
Characteristics (Ta=25°C)
•Q1, TR1 (NPN)
Symbol
Min.
BVCBO
180
BVCEO
160
BVEBO
6
ICBO
-
IEBO
-
*VCE(sat)1
-
*VCE(sat)2
-
*VBE(sat)1
-
*VBE(sat)2
-
*hFE1
100
*hFE2
120
*hFE3
40
fT
100
Cob
-
Typ.
-
-
-
-
-
0.1
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.15
0.2
0.9
1.0
-
270
-
-
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=180V
VEB=6V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
HBNP54S6
CYStek Product Specification