HBNP45S6R Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors)

CYStech Electronics Corp.
Spec. No. : C901S6R
Issued Date : 2004.04.19
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
• TR1 (NPN)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
50
-
BVEBO
7
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.2
*hFE
200
-
fT
80
180
Cob
-
2
Max.
-
-
-
0.1
0.1
0.4
600
-
3.5
• TR2 (PNP)
Symbol
Min.
BVCBO
-60
BVCEO
-50
BVEBO
-6
ICBO
-
IEBO
-
*VCE(sat)
-
*hFE
200
fT
60
Cob
-
Typ.
-
-
-
-
-
-0.25
-
140
4
Max.
-
-
-
-0.1
-0.1
-0.5
600
-
5
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=50µA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-60V
VEB=-6V
IC=-50mA, IB=-5mA
VCE=-6V, IC=-1mA
VCE=-12V, IC=-2mA, f=100MHz
VCB=-12V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
HBNP45S6R
CYStek Product Specification