HBNP2227S6R Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors)

CYStech Electronics Corp.
Spec. No. : C903S6R
Issued Date : 2003.03.18
Revised Date : 2004.06.19
Page No. : 2/6
Characteristics (Ta=25°C)
• TR1 (NPN)
Symbol
Min.
BVCBO
75
BVCEO
40
BVEBO
6
ICBO
-
ICEX
-
IEBO
-
*VCE(sat)
-
*VCE(sat)
-
*VBE(sat)
-
*VBE(sat)
-
hFE
35
hFE
50
hFE
75
*hFE
100
*hFE
50
*hFE
40
fT
300
Cob
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
100
0.3
1.0
1.2
2.0
-
-
-
300
-
-
-
8
• TR2 (PNP)
Symbol
Min.
BVCBO
-60
BVCEO
-60
BVEBO
-5
ICBO
-
ICEX
-
IEBO
-
*VCE(sat)
-
*VCE(sat)
-
*VBE(sat)
-
*VBE(sat)
-
hFE
75
hFE
100
hFE
100
*hFE
100
*hFE
50
fT
200
Cob
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-10
-50
-100
-0.4
-1.6
-1.3
-2.6
-
-
-
300
-
-
8
Unit
Test Conditions
V
IC=10 A
V
IC=10mA
V
IE=10 A
nA VCB=60V
nA VCE=60V,VEB=3V
nA VEB=3V
V
IC=150mA, IB=15mA
V
IC=500mA, IB=50mA
V
IC=150mA, IB=15mA
V
IC=500mA, IB=50mA
-
VCE=10V, IC=100 A
-
VCE=10V, IC=1mA
-
VCE=10V, IC=10mA
-
-
-
MHz
pF
VCE=10V, IC=150mA
VCE=1V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380 s, Duty Cycle≤2%
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=-10 A
IC=-10mA
IE=-10 A
VCB=-50V
VCE=-30V,VEB=-0.5V
VEB=-3V
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-100 A
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-20V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380 s, Duty Cycle≤2%
HBNP2227S6R
CYStek Product Specification