HBN2222S6R Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistors

CYStech Electronics Corp.
Spec. No. : C227S6R
Issued Date : 2003.08.29
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
75
-
-
V
IC=10µA
BVCEO
40
-
-
V
IC=10mA
BVEBO
6
-
-
V
IE=10µA
ICBO
-
-
10
nA VCB=60V
ICEX
-
-
10
nA
VCB=60V, VEB(off) = 3V
IEBO
-
-
100
nA VEB=3V
*VCE(sat) 1
-
-
0.3
V
IC=150mA, IB=15mA
*VCE(sat) 2
-
-
1.0
V
IC=500mA, IB=50mA
*VBE(sat) 1
-
-
1.2
V
IC=150mA, IB=15mA
*VBE(sat) 2
-
-
2.0
V
IC=500mA, IB=50mA
*hFE 1
35
-
-
-
VCE=10V, IC=100µA
*hFE 2
50
-
-
-
VCE=10V, IC=1mA
*hFE 3
75
-
-
-
VCE=10V, IC=10mA
*hFE 4
100
-
300
-
VCE=10V, IC=150mA
*hFE 5
50
-
-
-
VCE=1V, IC=150mA
*hFE 6
40
-
-
-
VCE=10V, IC=500mA
fT
300
-
-
MHz VCE=20V, IC=20mA, f=100MHz
Cob
-
-
8
pF VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
HBN2222S6R
CYStek Product Specification