HBCA144EC6 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – PNP and NPN Dual Digital Transistors

CYStech Electronics Corp.
Spec. No. : C155C6
Issued Date : 2013.10.02
Revised Date :
Page No. : 2/7
Absolute Maximum Ratings (Ta=25℃)
Parameter
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
Unit
50
-50
V
-10~+40 -40~+10
V
30
-30
mA
100
-100
mA
150 (Note)
mW
150
°C
-55~+150
°C
Note : 120mW per element must not be exceeded.
Characteristics (Ta=25℃)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
-
0.5 V VCC=5V, IO=100μA
VI(on)
3
-
- V VO=0.3V, IO=2mA
VO(on)
-
- 0.3 V IO/II=10mA/0.5mA
II
-
- 0.18 mA VI=5V
IO(off)
-
-
0.5 μA VCC=50V, VI=0V
GI
68
-
-
- VO=5V, IO=5mA
R1 32.9 47 61.1 kΩ -
R2/R1 0.8 1 1.2 - -
fT
- 250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
•Tr2(PNP)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
- -0.5 V VCC=-5V, IO=-100μA
VI(on)
-3
-
- V VO=-0.3V, IO=-2mA
VO(on)
-
- -0.3 V IO/II=-10mA/-0.5mA
II
-
- -0.18 mA VI=-5V
IO(off)
-
- -0.5 μA VCC=-50V, VI=0V
GI
68
-
-
- VO=-5V, IO=-5mA
R1 32.9 47 61.1 kΩ -
R2/R1 0.8 1 1.2 - -
fT
- 250 - MHz VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
HBCA144EC6
CYStek Product Specification