HBCA143TS6R Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – PNP and NPN Dual Digital Transistors

CYStech Electronics Corp.
Spec. No. : C154S6R
Issued Date : 2005.01.13
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
Unit
50
-50
V
50
-50
V
5
-5
V
100
-100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Note : 150mW per element must not be exceeded.
Characteristics (Ta=25℃)
•Tr1(NPN)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
VCBO
50
-
-
V IC=50µA
Collector-Emitter Breakdown Voltage VCEO 50 - - V IC=1mA
Emitter-Base Breakdown Voltage
VEBO
5
-
- V IE=50µA
Collector-Base Cutoff Current
ICBO
-
- 0.5 µA VCB=50V
Emitter-Base Cutoff Current
IEBO
-
- 0.5 µA VEB=4V
Collector-Emitter Saturation Voltage VCE(sat) -
- 0.3 V IC=5mA, IB=0.25mA
DC Current Gain
hFE 100 - 600 - VCE=5V, IC=1mA
Input Resistance
R
3.29 4.7 6.11 kΩ -
Transition Frequency
fT
- 250 - MHz VCE=10V, IE=5mA, f=100MHz*
* Transition frequency of the device
•Tr2(PNP)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
BVCBO -50 -
- V IC=-50µA
BVCEO -50 -
- V IC=-1mA
BVEBO -5 -
- V IE=-50µA
ICBO
-
- -0.5 µA VCB=-50V
IEBO
-
- -0.5 µA VEB=-4V
VCE(sat) - 0.1 -0.3 V IC=-5mA, IB=-0.25mA
hFE 100 - 600 - VCE=-5V, IC=-1mA
R 3.29 4.7 6.11 kΩ -
fT
- 250 - MHz VCE=-10V, IC=-5mA,f=100MHz *
* Transition frequency of the device
HBCA143TS6R
CYStek Product Specification