HBCA123JS6R Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – PNP and NPN Dual Digital Transistors

CYStech Electronics Corp.
Spec. No. : C156S6R
Issued Date : 2013.08.23
Revised Date : 2013.09.04
Page No. : 2/8
Absolute Maximum Ratings (Ta=25℃)
Parameter
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note : 120mW per element must not be exceeded.
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
Unit
50
-50
V
-5~+12
-12~+5
V
100
-100
mA
100
-100
mA
150 (Note)
mW
150
°C
-55~+150
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Limit
833
357
Unit
°C/W
°C/W
Characteristics (Ta=25℃)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
-
0.5 V VCC=5V, IO=100μA
VI(on) 1.1
-
- V VO=0.3V, IO=5mA
VO(on)
-
- 0.3 V IO/II=5mA/0.25mA
II
-
- 3.6 mA VI=5V
IO(off)
-
-
0.5 μA VCC=50V, VI=0V
GI
80
-
-
- VO=5V, IO=10mA
R1 1.54 2.2 2.86 kΩ -
R2/R1 17 21 26 - -
fT
- 250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
HBCA123JS6R
CYStek Product Specification