HBCA114ES6R Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – PNP and NPN Dual Digital Transistors

CYStech Electronics Corp.
Spec. No. : C152S6R
Issued Date : 2003.05.28
Revised Date : 2005.01.14
Page No. : 2/6
Absolute Maximum Ratings (Ta=25℃)
Parameter
Supply Voltage
Input Voltage
Output Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Tr1(NPN) Tr2(PNP)
Unit
50
-50
V
-10~+40 -40~+10
V
50
-50
mA
100
-100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Note : 150mW per element must not be exceeded.
Characteristics (Ta=25℃)
•Tr1(NPN)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
VI(on)
3
VO(on)
-
II
-
IO(off)
-
GI
30
R1
7
R2/R1 0.8
fT
-
-
0.5 V VCC=5V, IO=100µA
-
- V VO=0.3V, IO=10mA
- 0.3 V IO/II=10mA/0.5mA
- 0.88 mA VI=5V
-
0.5 µA VCC=50V, VI=0V
-
-
- VO=5V, IO=5mA
10 13 kΩ -
1 1.2 - -
250 - MHz VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
•Tr2(PNP)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
-
VI(on)
-3
VO(on)
-
II
-
IO(off)
-
GI
30
R1
7
R2/R1 0.8
fT
-
- -0.5 V VCC=-5V, IO=-100µA
-
- V VO=-0.3V, IO=-10mA
- -0.3 V IO/II=-10mA/-0.5mA
- -0.88 mA VI=-5V
- -0.5 µA VCC=-50V, VI=0V
-
-
- VO=-5V, IO=-5mA
10 13 kΩ -
1 1.2 - -
250 - MHz VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
HBCA114ES6R
CYStek Product Specification