HBC143TS6R Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Dual NPN Digital Transistors

CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor,TA=25℃)
Spec. No. : C369S6R
Issued Date : 2003.05.23
Revised Date :
Page No. : 2/4
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation(per device)
Junction Temperature
Storage Temperature
Note : 150mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
Unit
50
V
50
V
5
V
100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Electrical Characteristics (Each Transistor, TA=25℃)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min. Typ. Max. Unit
Test Conditions
50 -
- V IC=50µA
50 -
- V IC=1mA
5-
- V IE=50µA
-
- 0.5 µA VCB=50V
-
- 0.5 µA VEB=4V
- - 0.3 V IC=5mA, IB=0.25mA
100 - 600 - VCE=5V, IC=1mA
3.29 4.7 6.11 kΩ -
- 250 - MHz VCE=10V, IC=5mA, f =100MHz *
* Transition frequency of the device
HBC143TS6R
CYStek Product Specification