HBC114YC6 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Dual NPN Digital Transistors

CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25℃)
Spec. No. : C355C6
Issued Date : 2012.07.19
Revised Date :
Page No. : 2/6
Parameter
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Note: 120mW per element must not be exceeded.
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Unit
50
V
-6~+40
V
70
mA
100
mA
150 (Note)
mW
150
°C
-55~+150
°C
Electrical Characteristics (Each Transistor, Ta=25℃)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
-
3
-
-
-
68
7
3.7
-
Typ. Max. Unit
Test Conditions
- 0.3 V VCC=5V, IO=100μA
-
-
V VO=0.3V, IO=1mA
0.1 0.3 V IO/II=5mA/0.25mA
- 0.88 mA VI=5V
- 0.5 μA VCC=50V, VI=0V
-
-
- VO=5V, IO=5mA
10 13 kΩ -
4.7 5.7 - -
250 - MHz VCE=10V, IC=5mA, f =100MHz *
* Transition frequency of the device
Ordering Information
Device
HBC114YC6
Package
SOT-563
(Pb-free and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Marking
8D
HBC114YC6
CYStek Product Specification