HBC114ES6R Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Dual NPN Digital Transistors

CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25℃)
Spec. No. : C351S6R
Issued Date : 2003.05.22
Revised Date :
Page No. : 2/4
Parameter
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Unit
50
V
-10~+40
V
50
mA
100
mA
200 *1
mW
150
°C
-55~+150
°C
Note:*1.150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25℃)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
-
3
-
-
-
30
7
0.8
-
Typ. Max. Unit
Test Conditions
- 0.5 V VCC=5V, IO=100µA
-
-
V VO=0.3V, IO=10mA
0.1 0.3 V IO/II=10mA/0.5mA
- 0.88 mA VI=5V
- 0.5 µA VCC=50V, VI=0V
-
-
- VO=5V, IO=5mA
10 13 kΩ -
1 1.2 - -
250 - MHz VCE=10V, IC=5mA, f=100MHz*
* Transition frequency of the device
HBC114ES6R
CYStek Product Specification