HBA1514S6R Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – General Purpose PNP Epitaxial Planar Transistors

CYStech Electronics Corp.
Spec. No. : C307S6R
Issued Date : 2016.03.30
Revised Date :
Page No. : 2/7
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Note : 150mW per element must not be exceeded
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj ; Tstg
Limits
-180
-160
-5
-0.6
200 (Note )
625
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-180
-
BVCEO
-160
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat) 1
-
0.11
*VCE(sat) 2
-
0.25
*VBE(sat) 1
-
-
*VBE(sat) 2
-
-
hFE 1
100
-
hFE 2
100
-
hFE 3
50
-
hFE 4
120
-
fT
100
-
Cob
-
-
Max.
-
-
-
-50
-50
-0.16
-0.3
-1
-1
-
-
-
270
-
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-120V
VEB=-4V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-6V, IC=-2mA
VCE=-30V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
HBA1514S6R
CYStek Product Specification