HBA143ES6R Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Dual PNP Digital Transistors

CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor, Ta=25℃)
Spec. No. : C268S6R
Issued Date : 2003.05.28
Revised Date : 2011.02.21
Page No. : 2/6
Parameter
Supply Voltage
Input Voltage
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCC
VIN
IO
IO(max.)
Pd
Tj
Tstg
Limits
Unit
-50
V
-30~+10
V
-100
mA
-100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Note : 150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25℃)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
-
-3
-
-
-
20
3.29
0.8
-
Typ. Max. Unit
Test Conditions
- -0.5 V VCC=-5V, IO=-100μA
-
-
V VO=-0.3V, IO=-20mA
- -0.3 V IO/II=-10mA/-0.5mA
- -1.8 mA VI=-5V
- -0.5 μA VCC=-50V, VI=0V
-
-
- VO=-5V, IO=-10mA
4.7 6.11 kΩ -
1 1.2 - -
250 - MHz VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
Ordering Information
Device
HBA143ES6R
Package
SOT-363
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
0J
HBA143ES6R
CYStek Product Specification