HBA114TS6R Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Dual PNP Digital Transistors

CYStech Electronics Corp.
Absolute Maximum Ratings (Each Transistor,Ta=25℃)
Spec. No. : C254S6R
Issued Date : 2003.05.23
Revised Date :
Page No. : 2/4
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
Unit
-50
V
-50
V
-5
V
-100
mA
200 (Note)
mW
150
°C
-55~+150
°C
Note: 150mW per element must not be exceeded.
Characteristics (Each Transistor, Ta=25℃)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min. Typ. Max. Unit
Test Conditions
-50 -
- V IC=-50µA
-50 -
- V IC=-1mA
-5 -
- V IE=-50µA
-
- -0.5 µA VCB=-50V
-
- -0.5 µA VEB=-4V
- 0.1 -0.3 V IC=-10mA, IB=-1mA
100 - 600 - VCE=-5V, IC=-1mA
7 10 13 kΩ -
- 250 - MHz VCE=-10V, IC=-5mA, f =100MHz *
* Transition frequency of the device
HBA114TS6R
CYStek Product Specification