DTA114TS3 Datasheet, PDF (2/3 Pages) Cystech Electonics Corp. – General Purpose PNP Digital Transistors (Built-in Resistors)

CYStech Electronics Corp.
Spec. No. : C254S3
Issued Date : 2002.06.01
Revised Date : 2002.11.02
Page No. : 2/3
Electrical Characteristics (Ta=25°C)
Parameter
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
DC Current Gain
Input Resistance
Transition Frequency
Characteristic Curves
Symbol Min. Typ. Max. Unit
Test Conditions
VCBO -50 -
- V IC=-50uA
VCEO -50 -
- V IC=-1mA
VEBO -5 -
- V IE=-50uA
ICBO - - -0.5 uA VCB=-50V
IEBO - - -0.5 uA VEB=-4V
VCE(sat) - 0.1 -0.3 V IC=-10mA, IB=-1mA
hFE 100 - 600 - VCE=-5V, IC=-1mA
R
7 10 13 kΩ -
fT
- 250 - MHz VCE=-10V, IE=-5mA, f=100MHz*
* Transition frequency of the device
Current Gain vs Collector Current
1000
Saturation Voltage vs Collector Current
1000
100
10
0.1
HFE@VCE=5V
1
10
100
Collector Current---IC(mA)
250
200
150
100
50
0
0
PD - Ta
50
100
150
200
Ambient Temperature --- Ta(℃ )
DTA114TS3
100
VCE(SAT)@IC=10IB
10
1
10
100
Collector Current---IC(mA)
CYStek Product Specification