DTA114ES3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – PNP Digital Transistors (Built-in Resistors)

CYStech Electronics Corp.
Spec. No. : C252S3
Issued Date : 2003.06.12
Revised Date :
Page No. : 2/4
Electrical Characteristics (Ta=25°C)
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
-
-3
-
-
-
30
7
0.8
-
Typ. Max. Unit
Test Conditions
- -0.5 V VCC=-5V, IO=-100µA
-
-
V VO=-0.3V, IO=-10mA
- -0.3 V IO/II=-10mA/-0.5mA
- -0.88 mA VI=-5V
- -0.5 µA VCC=-50V, VI=0V
-
-
- VO=-5V, IO=-5mA
10 13 kΩ -
1 1.2 - -
250 - MHz VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
Characteristic Curves
Current Gain vs Output Current
1000
Vo = 5V
100
Output Voltage vs Output Current
10
Io / Ii = 20
1
0.1
10
0.1
1
10
100
Output Current---IO(mA)
Input Voltage vs Output Current(ON characteristics)
100
Vo = 0.3V
10
1
0.01
1
10
100
Output Current---IO(mA)
Output Current vs Input Voltage(OFF characteristics)
10
VCC = 5 V
1
0.1
0.1
0.1
1
10
100
Output Current---IO(mA)
0.01
0
0.5
1
1.5
2
2.5
3
Input Voltage---VI(OFF)(V)
DTA114ES3
CYStek Product Specification