DAN212N3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – High-speed switching diode

CYStech Electronics Corp.
Absolute Maximum Ratings @TA=25℃
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1µs
Total power dissipation(Note 1)
Junction Temperature
t=1ms
t=1s
Storage Temperature
Note 1: Device mounted on an FR-4 PCB.
Symbol
Min
V_RRM
-
VR
-
I_F
-
IFRM
IFSM
-
-
-
Ptot
T_j
-
T_stg
-65
Spec. No. : C303N3R
Issued Date : 2003.04.12
Revised Date
Page No. : 2/4
Max Unit
85
V
70
V
200 mA
500 mA
4
A
1
A
0.5
A
250 mW
150
°C
+150 °C
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Forward recovery voltage
Symbol
Conditions
Min Typ. Max Unit
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
VR=25V
VR=75V
IR
VR=25V,Tj=150℃
VR=75V,Tj=150℃
715 mV
-
-
855 mV
1V
1.25 V
30 nA
-
-
1 µA
30 µA
50 µA
Cd
VR=0V, f=1MHz
- - 1.5 pF
when switched from IF=10mA to
trr
IR=10mA,RL=100Ω, measured -
-
4 ns
at IR=1mA
Vfr
when switched from IF=10mA
tr=20ns
-
- 1.75 V
Thermal Characteristics
Symbol
Rth,j-tp
Rth, j-a
Parameter
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note 1: Device mounted on an FR-4 PCB.
Conditions
Note 1
Value
360
500
Unit
℃/W
℃/W
DAN212N3
CYStek Product Specification