DAN202S6R Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Switching Diode

CYStech Electronics Corp.
Absolute Maximum Ratings @TA=25℃
Spec. No. : C303S3N
Issued Date : 2010.09.17
Revised Date : 2010.10.21
Page No. : 2/6
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Average Rectified Forward Current (single)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1μs
Total power dissipation(Note 1)
t=1ms
t=1s
Operating Junction Temperature Range
Storage Temperature Range
Note 1: Device mounted on an FR-4 PCB.
Symbol
Min
Max Unit
V_RRM
-
110
V
VR
-
100
V
I_O
-
150 mA
IFM
300 mA
IFSM
-
-
4
A
1
A
-
0.5
A
Ptot
200 mW
T_j
-55
+150 °C
T_stg
-65
+150 °C
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters
Reverse Breakdown Voltage
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Symbol
Conditions
Min Typ. Max Unit
VR(BR) IR=100μA
IF=1mA
VF
IF=10mA
IF=50mA
-
IF=150mA
IR
VR=25V
VR=100V
-
Cd VR=0V, f=1MHz
-
when switched from IF=10mA to
trr IR=10mA,RL=100Ω, measured -
at IR=1mA
715 mV
-
855 mV
1V
1.25 V
-
30 nA
2.5 μA
- 2 pF
- 4 ns
Thermal Characteristics
Symbol
Rth, j-a
Parameter
thermal resistance from junction to ambient
Note 1: Device mounted on an FR-4 PCB.
Conditions Value
Note 1
625
Unit
℃/W
DAN202S6R
CYStek Product Specification