D45H11J3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C607J3
Issued Date : 2005.07.11
Revised Date :2006.04.07
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCEO(SUS)
-80
-
-
V
IC=-30mA, IB=0
ICEO
-
-
-10
µA VCE=-80V, IB=0
ICES
-
-
-10
µA VCE=-80V, VBE=0
IEBO
-
-
-50
µA VEB=-5V, IC=0
*VCE(sat)
-
0.6
1
V
IC=8A, IB=0.4A
*VBE(sat)
-
1.0
1.5
V
IC=8A, IB=0.8A
*hFE
60
-
-
-
VCE=-1V, IC=-2A
*hFE
40
-
-
-
VCE=-1V, IC=-4A
fT
-
40
-
MHz VCE=-10V, IC=-500mA, f=20MHz
Cob
-
230
-
pF VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
D45H11J3
Package
TO-252
(Pb-free)
Shipping
2500 pcs / Tape & Reel
Marking
D45H11
D45H11J3
CYStek Product Specification