BTN3904N3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C228N3-H
Issued Date : 2002.05.11
Revised Date : 2005.01.12
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=10µA
BVCEO
40
-
-
V
IC=1mA
BVEBO
6
-
-
V
IE=10µA
ICEX
-
-
50
nA VCE=30V, VBE=-3V
*VCE(sat)1
-
0.1
0.2
V
IC=10mA, IB=1mA
*VCE(sat)2
-
0.15
0.3
V
IC=50mA, IB=5mA
*VBE(sat)1
0.65
0.75
0.85
V
IC=10mA, IB=1mA
*VBE(sat)2
-
0.85
0.95
V
IC=50mA, IB=5mA
*hFE1
40
-
-
VCE=1V, IC=100µA
*hFE2
70
-
-
VCE=1V, IC=1mA
*hFE3
100
-
300
VCE=1V, IC=10mA
*hFE4
60
-
-
VCE=1V, IC=50mA
*hFE5
30
-
-
VCE=1V, IC=100mA
fT
300
-
-
MHz VCE=20V, IC=10mA, f=100MHz
Cob
-
-
4
pF VCB=5V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=1V
100
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
10
0.1
1
10
100
1000
Collector Current ---IC(mA)
10
0.1
1
10
100
1000
Collector Current---IC(mA)
BTN3904N3
CYStek Product Specification