BTN2129A3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C853A3
Issued Date : 2004.07.14
Revised Date :2004.09.02
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd(TA=25℃)
Tj
Tstg
Limits
Unit
80
V
50
V
5
V
8
A
12 *1
0.75
W
150
°C
-55~+150
°C
Characteristics (Ta=25°C)
Symbol
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat)
*VBE(on) 1
*VBE(on) 2
*hFE 1
*hFE 2
*hFE 3
Min.
50
-
-
-
-
-
-
-
-
500
2
2
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
10
10
2
1.3
1.5
2.1
2
2.1
-
20
-
Unit
Test Conditions
V
IC=1mA, IB=0
µA VCE=40V, IE=0
µA VCB=80V, IE=0
mA VEB=5V, IC=0
V
IC=3A, IB=12mA
V
IC=5A, IB=20mA
V
IC=3A, IB=12mA
V
VCE=3V, IC=3A
V
VCE=4V, IC=4A
-
VCE=3V, IC=500mA
K
VCE=3V, IC=3A
K
VCE=4V, IC=4A
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTN2129A3
CYStek Product Specification