BTN1101E3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C606E3-A
Issued Date : 2005.01.03
Revised Date :2008.01.30
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCEO(SUS)
80
-
-
V
IC=30mA, IB=0
ICES
-
-
10
μA VCE=80V, VBE=0
IEBO
-
-
50
μA VEB=5V, IC=0
*VCE(sat)
-
0.3
0.6
V
IC=8A, IB=0.4A
*VBE(sat)
-
1.0
1.5
V
IC=8A, IB=0.8A
*hFE
120
-
-
-
VCE=1V, IC=2A
*hFE
100
-
-
-
VCE=1V, IC=4A
fT
-
50
-
MHz VCE=6V, IC=500mA, f=20MHz
Cob
-
130
-
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
BTN1101E3
CYStek Product Specification