BTN1053K3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C818K3
Issued Date : 2013.10.01
Revised Date : 2013.12.25
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature and Storage Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj ; Tstg
Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%.
2: When the device is mounted on a FR-4 PCB measuring 15 ×15 ×0.6mm.
3: When the device is mounted on a ceramic substrate measuring 40 ×40 ×0.6mm.
Limits
150
75
5
2.5
5
900
139
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(sat) 1 *
VCE(sat) 2 *
VCE(sat) 3 *
VCE(sat) 4 *
VCE(sat) 5 *
VBE(sat) *
VBE(on) *
hFE 1
*
hFE 2
*
hFE 3
*
hFE 4
*
fT
Cob
Min.
150
150
75
5
-
-
-
-
-
-
-
-
-
-
330
340
120
10
-
-
Typ.
250
250
100
7.7
0.9
0.9
0.6
-
-
-
-
-
0.9
0.95
-
600
300
25
140
23
Max.
-
-
-
10
10
10
60
200
400
250
500
1.2
1.2
-
820
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=100μA
IC=10mA
IE=100μA
VCB=120V
VCE=120V
VEB=4V
IC=200mA, IB=20mA
IC=500mA, IB=20mA
IC=1A, IB=10mA
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=1A, IB=50mA
VCE=2V, IC=3A
VCE=2V, IC=10mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=4.5A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
BTN1053K3
CYStek Product Specification