BTN1053I3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C818I3
Issued Date : 2010.01.26
Revised Date : 2014.02.26
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed) (Note 1)
Power Dissipation @TA=25℃
Power Dissipation @TC=25℃
VCBO
150
V
VCEO
80
V
VEBO
6
V
IC
2.5
A
ICP
5
1.5
PD
W
10
Operating Junction Temperature and Storage Range Tj ; Tstg
-55~+150
°C
Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
83.3
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCES
BVCEO
BVEBO
ICBO
ICES
IEBO
VCE(sat) 1 *
VCE(sat) 2 *
VCE(sat) 3 *
VCE(sat) 4 *
VCE(sat) 5 *
VBE(sat) *
VBE(on) *
hFE 1 *
hFE 2 *
hFE 3 *
hFE 4 *
fT
Cob
Min.
150
150
80
6
-
-
-
-
-
-
-
-
-
-
300
300
120
30
-
-
Typ.
250
250
110
7.4
-
-
-
28
80
270
110
210
0.9
0.9
570
550
300
100
140
23
Max.
-
-
-
100
100
100
40
150
400
250
300
1.2
1.2
-
820
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=100μA
IC=10mA
IE=100μA
VCB=150V
VCE=150V
VEB=5V
IC=200mA, IB=20mA
IC=500mA, IB=20mA
IC=1A, IB=10mA
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=1A, IB=50mA
VCE=2V, IC=3A
VCE=2V, IC=10mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
BTN1053I3
CYStek Product Specification