BTD669M3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C625M3
Issued Date : 2015.09.11
Revised Date :
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj
Tstg
Limits
Unit
180
V
160
V
6
V
1
A
3
A
0.2
A
0.6
W
1 (Note 1)
W
2 (Note 2)
W
-55~+150
°C
-55~+150
°C
Thermal Characteristics
Parameter
Symbol
Value
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Case
RθJC
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
208
125 (Note 1)
62.5 (Note 2)
50
Unit
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
180
160
6
-
-
-
-
-
160
30
100
-
Typ.
-
-
-
-
-
0.25
0.87
0.73
-
-
-
6.3
Max.
-
-
-
100
100
0.5
1.2
1.5
320
-
-
15
Unit
V
V
V
nA
nA
V
V
V
-
-
MHz
pF
Test Conditions
IC=1mA
IC=10mA
IE=1mA
VCB=180V
VEB=6V
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTD669M3
CYStek Product Specification