BTD5510F3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C658F3
Issued Date : 2005.08.23
Revised Date :
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
Pd(TA=25℃)
Pd(TC=25℃)
RθJA
RθJC
Tj
Tstg
Limits
250
250
10
15
2
60
62.5
2.08
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VCE(sat) 5
*VBE(sat)
*VBE(on)
*hFE
Min.
250
250
-
-
-
-
-
-
-
-
-
-
1000
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
100
100
5
780
1.4
1.3
1.2
1.1
2
1.8
-
Unit
Test Conditions
V
IC=100µA, IE=0
V
IC=1mA, IB=0
µA VCE=250V, IE=0
µA VCB=250V, IE=0
mA VEB=5V, IC=0
mV IC=200mA, IB=300uA
V
IC=10A, IB=250mA
V
IC=7A, IB=50mA
V
IC=5A, IB=20mA
V
IC=4A, IB=5mA
V
IC=8A, IB=15mA
V
VCE=4V, IC=8A
-
VCE=10V, IC=5A
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTD5510F3
CYStek Product Specification