BTD2118T3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C847T3
Issued Date : 2007.06.26
Revised Date :
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
80
-
-
V
IC=50µA, IE=0
BVCEO
30
-
-
V
IC=1mA, IB=0
BVEBO
7
-
-
V
IE=50µA, IC=0
ICBO
-
-
1
µA VCB=80V, IE=0
IEBO
-
-
1
µA VEB=6V, IC=0
*VCE(sat)
-
-
0.5
V
IC=3A, IB=100mA
*VCE(sat)
-
-
0.6
V
IC=3A, IB=60mA
*VBE(sat)
-
-
1.2
V
IC=3A, IB=100mA
*hFE1
260
-
-
-
VCE=2V, IC=20mA
*hFE2
300
-
600
-
VCE=2V, IC=500mA
*hFE3
200
-
-
-
VCE=2V, IC=2A
fT
-
150
-
MHz VCE=6V, IC=500mA
Cob
-
-
50
pF VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
BTD2118T3
Package
TO-126
(Pb-free)
Shipping
250 pcs / bag, 10 bags / box
Marking
D2118
BTD2118T3
CYStek Product Specification