BTD1816I3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C821I3
Issued Date : 2005.10.05
Revised Date :2009.02.04
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25°C
Power Dissipation @ TC=25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
120
100
6
4
8 (Note 1)
1.2
1
20
125
6.25
150
-55~+150
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw≤380μs, Duty≤2%.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
120
-
-
V
IC=10μA, IE=0
*BVCEO
100
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IC=10μA, IC=0
ICBO
-
-
1
μA VCB=100V, IE=0
IEBO
-
-
1
μA VEB=4V, IC=0
*VCE(sat) 1
-
50
120
mV IC=1A, IB=50mA
*VCE(sat) 2
-
90
250
mV IC=2A, IB=200mA
*VBE(sat)
-
0.9
1.2
V
IC=2A, IB=200mA
*hFE 1
180
-
560
-
VCE=5V, IC=500mA
*hFE 2
120
-
-
-
VCE=5V, IC=3A
fT
-
180
-
MHz VCE=10V, IC=500mA
Cob
-
40
-
pF VCB=10V, f=1MHz
ton
-
100
-
ns
VCC=50V, IC=10IB1=-10IB2=2A,
tstg
-
900
-
ns
RL=25Ω
tf
-
50
-
ns
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification of hFE 1
Rank
R
Range
180~390
S
270~560
Ordering Information
Device
BTD1816I3
Package
TO-251
(RoHS compliant)
Shipping
80 pcs / tube, 50 tubes / box
Marking
D1816
BTD1816I3
CYStek Product Specification