BTC5201D3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C653D3
Issued Date : 2003.10.03
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCEO(SUS)
ICES
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat) 1
*VBE(sat) 2
*hFE 1
*hFE 2
fT
Cob
Min.
80
-
-
-
-
-
-
60
40
-
-
Typ.
-
-
-
0.1
-
-
-
-
-
50
130
Max.
-
10
50
0.3
0.6
1.2
1.5
-
-
-
-
Unit
V
µA
µA
V
V
V
V
-
-
MHz
pF
Test Conditions
IC=30mA, IB=0
VCE=80V, VBE=0
VEB=5V,IC=0
IC=2A, IB=0.2A
IC=8A, IB=0.4A
IC=2A, IB=0.2A
IC=8A, IB=0.8A
VCE=1V, IC=0.1A
VCE=1V, IC=4A
VCE=6V, IC=500mA, f=20MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTC5201D3
CYStek Product Specification