BTC4505N3 Datasheet, PDF (2/4 Pages) Comchip Technology – High Voltage Transistor (NPN)

CYStech Electronics Corp.
Spec. No. : C210N3
Issued Date : 2003.05.09
Revised Date : 2004.04.02
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)
*VBE(sat)
hFE
fT
Cob
Min.
400
400
6
-
-
-
-
-
100
-
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=50µA, IE=0
-
-
V
IC=1mA, IB=0
-
-
V
IE=50µA, IC=0
-
10
µA VCB=400V, IE=0
-
20
nA
VCE=300V, REB=4kΩ
-
10
µA VEB=6V,IC=0
0.1
0.5
V
IC=10mA, IB=1mA
1.5
V
IC=10mA, IB=1mA
-
270
-
VCE=10V, IC=10mA
20
-
MHz VCE=10V, IC=10mA, f=10MHz
7
-
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTC4505N3
CYStek Product Specification