BTC3415A3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
400
300
6
100
625
150
-55~+150
Spec. No. : C209A3
Issued Date : 2008.01.25
Revised Date : 2014.03.06
Page No. : 2/6
Unit
V
V
V
mA
mW
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
400
300
6
-
-
-
-
-
90
100
80
50
-
Typ.
-
-
-
-
-
0.15
-
-
-
-
-
100
2.1
Max.
-
-
-
100
100
0.4
2
1
-
300
-
-
-
Unit
V
V
V
nA
nA
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=400V
VEB=6V
IC=50mA, IB=5mA
IC=100mA, IB=5mA
IC=50mA, IB=5mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=30V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTC3415A3
CYStek Product Specification