BTC2880M3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C319M3
Issued Date : 2007.05.31
Revised Date : 2013.09.23
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
IB
Power Dissipation
Pd
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
Limits
Unit
180
V
120
V
7
V
1
A
2
A
0.6
W
1 (Note 1)
W
2 (Note 2)
W
150
°C
-55~+150
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
180
120
7
-
-
-
-
-
-
100
100
80
50
-
Typ.
-
-
-
-
-
0.1
0.2
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.2
0.5
1
0.9
-
270
-
-
20
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=180V
VEB=6V
IC=500mA, IB=50mA
IC=1A, IB=50mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=50mA
VCE=5V, IC=100mA
VCE=5V, IC=800mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
Range
P
100~200
Q
120~270
BTC2880M3
CYStek Product Specification