BTC2655K3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Note : Pulse test, pulse width≤300μs, duty cycle≤2%
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
RθJA
Tj ; Tstg
Limits
120
60
7
2
5 (Note)
0.5
900
139
-55~+150
Unit
V
V
V
A
A
A
mW
°C/W
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*RCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Cob
ton
tstg
tf
Min.
120
60
7
-
-
-
-
-
0.5
200
80
-
-
-
-
-
Typ.
-
-
-
-
-
100
100
-
0.9
-
-
250
13
40
500
120
Max.
-
-
-
100
100
300
300
350
1.2
400
-
-
-
-
-
-
Unit
V
V
V
nA
nA
mV
mΩ
mV
V
-
-
MHz
pF
ns
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=120V
VEB=7V
IC=1A, IB=50mA
IC=1A, IB=50mA
IC=1A, IB=20mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1.5A
VCE=2V, IC=300mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
VCC=30V, IC=1A, IB1=-IB2=33mA,
RL=30Ω
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
BTC2655K3
CYStek Product Specification