BTC2412N3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C202N3
Issued Date : 2002.05.11
Revised Date : 2002.10.31
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
50
-
BVEBO
7
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.2
*hFE
120
-
fT
80
180
Cob
-
2
Classification Of hFE
Max.
-
-
-
0.1
0.1
0.4
820
-
3.5
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=50uA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
Q
120-270
R
180-390
S
270-560
T
410-820
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=6V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
100
0.1
1
10
100
1000
Collector Current--- IC(mA)
10
0.1
1
10
100
1000
Collector Current--- IC(mA)
BTC2412N3
CYStek Product Specification