BTC2328AK3 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C858K3
Issued Date : 2014.11.24
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
Base Current
(Note 1)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature and Storage Range
Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
RθJA
Tj ; Tstg
Limits
80
30
6
2
5
0.5
1
125
-55~+150
Unit
V
A
W
°C/W
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat) *
RCE(sat) *
VBE(sat) *
VBE(on) *
hFE
*
fT
Cob
Min.
80
30
6
-
-
-
-
-
-
160
120
-
Typ.
-
-
-
-
-
-
-
-
-
-
270
16.5
Max.
-
-
-
100
100
500
333
1.2
1
320
-
30
Unit
V
V
V
nA
nA
mV
mΩ
V
V
-
MHz
pF
Test Conditions
IC=100μA
IC=10mA
IE=100μA
VCB=80V
VEB=6V
IC=1.5A, IB=30mA
IC=1.5A, IB=30mA
IC=1.5A, IB=30mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCE=5V, IC=500mA
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
BTC2328AK3
CYStek Product Specification