BTC1510J3_09 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C652J3
Issued Date : 2003.05.16
Revised Date :2009.02.04
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
Limits
Unit
150
V
150
V
5
V
10
15 *1
A
1.75
W
20
150
°C
-55~+150
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
*VBE(on) 1
*VBE(on) 2
*VFEC
*hFE1
*hFE2
Min.
150
150
-
-
-
-
-
-
-
-
-
-
2
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
200
200
2
1.5
3
2
2
2.8
4.5
3
20
-
Unit
Test Conditions
V
IC=100μA, IE=0
V
IC=1mA, IB=0
μA VCE=150V, IE=0
μA VCB=150V, IE=0
mA VEB=5V, IC=0
V
IC=5A, IB=10mA
V
IC=10A, IB=100mA
V
IC=5A, IB=2.5mA
V
IC=5A, IB=5mA
V
VCE=3V, IC=5A
V
VCE=3V, IC=10A
V
IC=5A
K
VCE=3V, IC=5A
-
VCE=3V, IC=10A
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTC1510J3
Package
TO-252
(RoHS compliant)
Shipping
2500 pcs / Tape & Reel
Marking
C1510
BTC1510J3
CYStek Product Specification